W-band fully passivated AlNGaN HEMT device with 56% power

gan 78In this paper, a hh-efficiency compact power amplifier is desned and fabricated with a 0.25 μm GaN hh electron mobility transistor (HEMT) to meet the demands of a hhWe report on deeply scaled AlNGaN HEMTs demonstrating power added efficiency (PAE) of 56% and 780 mWmm output power at 94 GHz. This hh transistor efficiency at W-band is enabled